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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4106 DESCRIPTION *High Collector-Emitter Breakdown Voltage : V(BR)CEO= 400V(Min.) *High Switching Speed *Wide Area of Safe Operation APPLICATIONS *Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w w scs .i w 500 400 7 7 14 3 50 V V .cn mi e V A ICM Collector Current-Peak A IB B Base Current-Continuous A Collector Power Dissipation@TC=25 PC Collector Power Dissipation@Ta=25 W 1.75 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 hFE-3 fT COB PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Gurrent Gain DC Gurrent Gain CONDITIONS IC= 5mA ; RBE= IC= 1mA ; IE= 0 IE= 1mA ; IC= 0 IC= 4A; IB= 0.8A B 2SC4106 MIN 400 500 7 TYP. MAX UNIT V V V 0.8 1.5 10 10 50 V V A A IC= 4A; IB= 0.8A B VCB= 400V; IE= 0 Current-Gain--Bandwidth Product Output Capacitance Switching times ton tstg tf w w w. .cn mi cse is VEB= 5V; IC=0 IC= 0.8A ; VCE= 5V 15 IC= 4A ; VCE= 5V 10 IC= 10mA ; VCE= 5V 10 IC= 0.8A ; VCE= 10V IE= 0;VCB= 10V; ftest= 1.0MHz IC= 5A ;IB1= 1A; IB2= -2A RL= 40; VCC= 200V 20 80 MHz pF Turn-on Time Storage Time Fall Time 0.5 2.5 0.3 s s s hFE-1 Classifications L 15-30 M 20-40 N 30-50 isc Websitewww.iscsemi.cn 2 |
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